This is cool: according to physicsweb.org, "Researchers have found that the band gap of indium nitride is only about a third of the previously reported and widely accepted value... A fundamental limit to the efficiency of a solar cell is the band gap of the semiconductor from which it is made... Wladek Walukiewicz and co-workers have measured the optical properties of pure indium nitride and a wide range of alloys made of indium, gallium and nitrogen. They find that the band gap can vary between 0.7 and 3.4 eV, which covers the entire solar spectrum... The team also found that alloys made from indium, aluminium and nitrogen had an even wider range of band gaps - from 0.7 to 6.2 eV. This should allow nitride-based alloys to be used in a range of optoelectronic applications from the near infrared to the far ultraviolet."

The textbook value for the bandgap of indium nitride is about 2.0eV. They remeasured it at .7eV. I wonder what other established textbook quantities might be erroneous? "The researchers believe their results to be more reliable than previous results because they used higher quality samples grown with epitaxial techniques."